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Copper evolution and beyond: Advanced interconnects for future CMOS nodes

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Even after 27 years, IBM’s innovation in introducing Cu (copper) damascene technology for BEOL (Back-End-of-Line) in CMOS semiconductor production remains the industry standard for high-performance and low-power logic integrated circuit chip manufacturing. In this paper, IBM introduces an advanced low-k dielectric (ALK) material, which offers unparalleled mechanical strength, plasma-induced damage (PID) resistance, adhesion, and Cu-O2 diffusion barrier properties. This cutting-edge ALK film enables continued Cu barrier scaling for lower line resistance while significantly improving patterning of trenches without compromising the reliability.

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