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Electromigration Concerns Grow in Advanced Packages
Higher density, heat, and more materials make it harder to ensure reliability.
Black’s equation describes an interconnect’s mean time-to-failure with respect to its temperature, current density and the activation energy needed to dislodge a metal atom as: As the required current density and Joule heating temperature is increasing in the fine-line Cu RDL structures (<5nm lines and spaces), self-heating is considered a key factor in the reliability of high-density fan out packages. Meanwhile, a team of researchers from ASE recently demonstrated how susceptibility to electromigration is determined on copper pillar interconnects in flip chip quad flat no-lead (FCQFN) for high-power automotive applications.
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