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Flash of the Future: New Memory Breakthrough in China Rivals RAM
The record-breaking chip could power future AI systems, and may be ready for industry use within five years.
As AI systems demand faster, denser memory, researchers in Shanghai have developed a flash device that operates at picosecond speeds — breaking records and potentially opening the door to a new generation of computing. According to the research team’s paper published in Nature on Wednesday, the breakthrough marks the fastest semiconductor charge storage ever recorded, with performance on par with cutting-edge computing systems. “In the blink of an eye, the super flash memory performed 1 billion operations, while conventional USB drives can only manage 1,000,” said Professor Zhou Peng, a lead researcher on the project.
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