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Harnessing orbital Hall effect in spin-orbit torque MRAM
There has been a recent surge in interest in using the orbital Hall effect to improve switching performance and expand the material options for spin-orbit torque driven magnetic memory. Here, Gupta et al demonstrate a significant improvement switching efficiency through integration of Ru in place of the more standard heavy metal, Pt.
We have engineered a PMA [Co/Ni] 3 FM on selected OHE layers (Ru, Nb, Cr) and investigated the potential of theoretically predicted larger orbital Hall conductivity (OHC) to quantify the torque and switching current in OHE/[Co/Ni] 3 stacks. This integration includes ensuring that the stack exhibits sufficient PMA for high thermal stability, coupled with strong torques from the OHE and efficient conversion of orbital to spin, offering a promising avenue to reduce power consumption in data storage devices. These results highlight the promising potential of leveraging the enhanced orbital Hall effect to propel the performance of next-generation of SOT MRAM devices for high-density packed cache memory applications.
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