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HiFi-DRAM: Enabling High-Fidelity DRAM Research by Uncovering Sense Amplifiers
DRAM research is difficult. Work that aims to be applicable to commodity devices should consider the sense amplifier internal layouts, transistor dimensions and circuit typologies used by real devices. These are all essential elements that must be considered while proposing new ideas. Unfortunately, they are not disclosed by DRAM vendors. As such, researchers are forced… Read
To overcome these challenges, we performed IC imaging of 3 DDR4 and 3 DDR5 chips from the 3 major DRAM vendors as shown in the video above. We performed Scanning Electron Microscopy (SEM) with the aid of Focused Ion Beam (FIB). Based on our findings, we provide 4 recommendations that we hope future research will follow.In general, we discovered that relying on dual-contact cells ( DCC) leads to severe area overheads, never considered in the original papers employing them.
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