Get the latest tech news
Imec demonstrates electrical yield for 20nm lines High NA EUV single patterning
First electrical tests at 20nm pitch present a next milestone in validating the High NA extreme ultraviolet (EUV) patterning ecosystem
In August 2024, imec was the first to present industry-relevant logic and DRAM structures patterned in a single High NA EUV lithography exposure step. Steven Scheer, senior vice president R&D at imec: “This is the first ever electrical yield demonstration of 20nm pitch metal lines obtained with single High NA EUV patterning. When combined with e-beam inspection, conductivity measurements of metallized serpentine and fork-fork structures give information on the stochastic defects (i.e., breaks and bridges, respectively) that lead to reduced yield.
Or read this on Hacker News
