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Imec demonstrates logic and DRAM structures using High NA EUV Lithography
These Results confirm the readiness of the High NA EUV patterning ecosystem for enabling future logic and memory use cases.
These breakthrough results follow intensive preparatory work by imec and ASML – in close collaboration with its partners – to ready the patterning ecosystem and metrology for the first generation of High NA EUV Lithography. The results showcase the unique potential for High NA EUV to enable single-print imaging of aggressively-scaled 2D features, improving design flexibility as well as reducing patterning cost and complexity. Luc Van den hove, president and CEO of imec: “The results confirm the long-predicted resolution capability of High NA EUV lithography, targeting sub 20nm pitch metal layers in one single exposure.
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