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Intel details 18A process technology — takes on TSMC 2nm with 30% density gain and 25% faster generational performance
Intel bets big on 18A
Such an architecture enables engineers to finely tune device characteristics for either high performance or low power consumption by adjusting the total effective channel width (Weff). An Intel graph from the paper shows that despite this wide VT range, the transistors exhibit strong electrical characteristics, including steep subthreshold slopes and well-behaved drive currents across both Id–Vg and Id–Vd curves. These results confirm that Intel has successfully maintained device performance and control across the entire VT spectrum, which enables flexible circuit design choices that balance frequency, power, and leakage within the same process.
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