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Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC)
View presentations details for Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC) at SPIE Advanced Lithography + Patterning
It is shown to be feasible to evolve into the GAA era with the minimum change of current FinFET process and a minor refining of previously reported Forksheet structure. It is based on the self-aligned multiple patterning (SAMP) wherein either an alternating arrangement of different materials (with high etching selectivity) or multi-color layer decomposition (i.e., splitting of metallization process) is utilized to solve the edge-placement-error (EPE) issue. Moreover, this technique can incorporate rigorously self-aligned vias & cuts (SAVC), and accommodate a metal-layer division (MLD) to split the neighboring metal lines into two vertically staggered layers with their coupling capacitance significantly reduced.
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