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MIT creates nanoscale transistors for next-gen electronics
MIT researchers have developed a new type of 3D transistor that could be more energy-efficient and powerful than current silicon-based transistors.
However, a fundamental limitation known as Boltzmann tyranny imposes a minimum voltage requirement for transistor operation at room temperature. To overcome it, these new transistors use ultrathin semiconductor materials and quantum mechanics to achieve high performance at low voltage. “We have a lot of flexibility to design these material heterostructures so we can achieve a very thin tunneling barrier, which enables us to get very high current,” Shao said.
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