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MIT researchers bond gallium nitride transistors to silicon chips for faster next-gen devices
Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a promising material for next-generation electronics, including power amplifiers that drive...
Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a promising material for next-generation electronics, including power amplifiers that drive mobile phone signals and high-frequency components essential for data centers. The new process, recently presented at the IEEE Radio Frequency Integrated Circuits Symposium, addresses these obstacles by introducing a scalable and cost-effective way to bond GaN transistors directly onto silicon chips. Beyond immediate applications in wireless communications and data centers, the researchers believe this technology could play a role in future quantum computing systems, where GaN's performance at extremely low temperatures offers distinct advantages over silicon.
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