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MIT scientists develop transistor with nanosecond switching and billion-cycle durability
The transistor's killer performance stems from the unique properties of the 2021 ferroelectric material, which is composed of razor-thin layers of boron nitride stacked parallel to each other.
Now, those same researchers have one-upped themselves by using that substance to build a transistor that utterly smokes the conventional chips powering today's gadgets – with nanosecond switching speeds and incredible durability. The transistor's killer performance stems from the unique properties of the 2021 ferroelectric material, which is composed of razor-thin layers of boron nitride stacked parallel to each other. When an electric field is applied to it, the parallel layers slightly shift positions, nudging the boron and nitrogen atoms just a hair's breadth.
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