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Nanoscale transistors could enable more efficient electronics
Nanoscale 3D transistors made from ultrathin semiconductor materials can operate more efficiently than silicon-based devices, leveraging quantum mechanical properties to potentially enable ultra-low-power AI applications.
In an effort to overcome this fundamental limit of silicon, MIT researchers fabricated a different type of three-dimensional transistor using a unique set of ultrathin semiconductor materials. Using tools at MIT.nano, MIT’s state-of-the-art facility for nanoscale research, the engineers were able to carefully control the 3D geometry of their transistors, creating vertical nanowire heterostructures with a diameter of only 6 nanometers. These features have been realized through a well-mastered and nanometer-size-controlled process,” says Aryan Afzalian, a principal member of the technical staff at the nanoelectronics research organization imec, who was not involved with this work.
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