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New transistor’s superlative properties could have broad electronics applications
A new transistor’s superlative properties could change electronics. The ultrathin material it is made of, developed by MIT's Materials Research Laboratory, enables superfast switching and extreme durability.
In 2021, a team led by MIT physicists reported creating a new ultrathin ferroelectric material, or one where positive and negative charges separate into different layers. Additional authors are Xirui Wang, an MIT graduate student in physics; Daniel Bennett and Efthimios Kaxiras of Harvard University; Suraj S. Cheema, an assistant professor in MIT’s Department of Electrical Engineering and Computer Science and an affiliate of the Research Laboratory of Electronics; and Kenji Watanabe and Takashi Taniguchi of the National Institute for Materials Science in Japan. The new ferroelectric material reported in Science in 2021 is based on atomically thin sheets of boron nitride that are stacked parallel to each other, a configuration that doesn’t exist in nature.
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