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New transistors switch at nanosecond speeds and deliver remarkable durability — ferroelectric material transistor could revolutionize electronics, say MIT scientists
Promising technology could impact electronics in a big way.
Aside from getting more performance per area, it would also lead to higher energy efficiency — a crucial factor in the future of AI processing, especially as power limitations are now serving as the primary bottleneck in expanding data centers. On the other hand, this transistor showed no signs of degradation even after 100 billion switches, potentially giving birth to archival flash storage. Cornell University assistant professor Kenji Yasuda, who is the co-first author of the study, also added, “If people could grow these materials on the wafer scale, we could create many, many more.”
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