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Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory
Data-centric applications benefit from dense, low-power memory. Here the authors use a combination of chalcogenide superlattices and nanocomposites to achieve low switching voltage (0.7 V) and fast speed (40 ns) in 40-nm-scale phase-change memory.
The efficient operation is enabled by strong heat confinement within the superlattice interfaces and nanoscale dimensions, while the unique microstructural properties of GST467 and its higher crystallization temperature facilitate the simultaneously faster switching speed and improved stability, going beyond the fundamental trade-off for PCM technology. 1c shows the cross-section of one of our mushroom-cell devices (with ≈ 40 nm TiN BE) in the high resistance state (HRS) after ≈ 5000 electrical cycles, revealing an amorphous dome surrounded by preserved vdW-like interfaces (zoomed-in TEM and diffraction pattern in supplementary Fig. For the SL-PCM devices, we also subsequently deposit ≈ 10 nm Pt (25 sccm Ar, 2 mTorr pressure at 100 W dc power) at room temperature as part of the rest of the top electrode to complete the fabrication process.
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