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Room temp chirality switching and detection in a helimagnetic MnAu2 thin film
Some materials have an internal degree of freedom called chirality, such as helimagnets, where the magnetic order has a helix structure with a specific chirality. Here, Masuda et al. demonstrate chirality switching and detection at room temperature in helimagnetic MnAu2 thin films.
To experimentally demonstrate the transverse resistance originating from the chirality-dependent spin accumulation, we prepared bilayer devices consisting of MnAu 2 and Pt on hexagonal ScMgAlO 4 substrates (see “Methods” and Supplementary Figs. When an electric current I is applied along the MnAu 2[001] direction, the chirality-dependent accumulated spin moment should diffuse to the Pt layer, and a transverse voltage V T is expected to emerge owing to the ISHE as schematically shown in Fig. Further reducing the electric current and extending the working temperature of chirality switching may be achieved by weakening the magnetic anisotropy by means of a suitable choice of substrate (see Supplementary Information, section 3).
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