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Samsung Launches 12-Hi 36GB HBM3E Memory Stacks with 10 GT/s Speed
by Anton Shilov on February 27, 2024 8:00 AM EST Samsung announced late on Monday the completion of the development of its 12-Hi 36 GB HBM3E memory stacks, just hours after Micron said it had kicked off mass production of its 8-Hi 24 GB HBM3E memory products. The new memory packages, codenamed Shinebolt, increase peak bandwidth and capacity compared to their predecessors, codenamed Icebolt, by over 50% and are currently the world's fastest memory devices.
As the description suggests, Samsung's Shinebolt 12-Hi 36 GB HBM3E stacks pack 12 24Gb memory devices on top of a logic die featuring a 1024-bit interface. Secondly, to ensure that 12-Hi HBM3E stacks have the same z-height as 8-Hi HBM3 products, Samsung used its advanced thermal compression non-conductive film (TC NCF), which allowed it to achieve the industry's smallest gap between memory devices at seven micrometers (7 µm). Samsung estimates that its 12-Hi HBM3E 36 GB modules can increase the average speed for AI training by 34% and expand the number of simultaneous users of inference services by more than 11.5 times.
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