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Samsung Starts Mass Production of 9th Generation V-NAND: 1Tb 3D TLC NAND

y Anton Shilov on April 23, 2024 6:30 PM EST Samsung Electronics has started mass production of its 9th generation of V-NAND memory. The first dies based on their latest NAND tech come in a 1 Tb capacity using a triple-level cell (TLC) architecture, with data transfer rates as high as 3.2 GT/s.

The latest V-NAND also features the introduction of a faster NAND flash interface, Toggle DDR 5.1, which boosts peak data transfer rates by 33% to 3.2 GT/s, or almost 400MB/sec for a single die. "We are excited to deliver the industry’s first 9th-gen V-NAND which will bring future applications leaps forward," said SungHoi Hur, Head of Flash Product & Technology of the Memory Business at Samsung Electronics. Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the coming AI generation."

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