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SK Hynix Starts Mass Production of HBM3E: 9.2 GT/s
by Anton Shilov on March 19, 2024 9:30 AM EST SK Hynix said that it had started volume production of its HBM3E memory and would supply it to a customer in late March. The South Korean company will be the second DRAM producer to announce mass production of HBM3E, so the market of ultra-high-performance memory will have some competition, which is good for companies that plan to use HBM3E.
According to specifications, SK Hynix's HBM3E known good stack dies (KGSDs) feature a 9.2 GT/s data transfer rate, a 1024-bit interface, and a bandwidth of 1.18 TB/s, which is massively higher than the 6.4 GT/s and 819 GB/s offered by HBM3. We already know that SK Hynix's HBM3E stacks employ the company's advanced Mass Reflow Molded Underfill (MR-RUF) technology, which promises to reduce heat dissipation by 10%. Although the memory maker does not officially confirm this, SK Hynix's 24GB HBM3E stacks will arrive just in time to address Nvidia's H200 GPU for artificial intelligence and high-performance computing applications.
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