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Subnanosecond Flash Memory
A two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanism that supports both electron and hole injection is used to make devices with a subnanosecond program speed.
Figure 1a,b shows schematic diagrams of the 2D transistor structures used in this work, comprising a bottom control gate, a hexagonal boron nitride (hBN) dielectric and a thin-body channel. As the pulse width is reduced from 1 ns to 400 ps, the memory window undergoes a corresponding decrease, ranging from 1.8 V to 0.78 V. The hot holes can also support the sub-1-ns program and the detailed sub-1-ns performance of batches of graphene devices is provided in Supplementary Information section 6. High-speed volatile memory (SRAM and DRAM) and silicon flash programmed by hot electrons are shown for different channel lengths, with the arrows indicating the advanced nodes.
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