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Tailoring amorphous boron nitride for high-performance 2d electronics

Here, the authors demonstrate a wafer-scale, low-temperature process using atomic layer deposition, for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. They further fabricate aBN-encapsulated monolayer MoS2 field-effect transistors.

Finally, we fabricate and characterize ALD aBN-encapsulated double-gated monolayer (ML) MoS 2 transistors with various channel lengths and gate dielectric stacks to study key performance metrics across a large number of devices. The N-deficiency shown in the 65 °C film, combined with the higher detected O at%, is also consistent with incomplete ligand exchange at low deposition temperatures, leading to oxidation of unreacted B-Cl bonds upon air exposure and noting all XPS measurements are ex situ. Additionally, we have demonstrated that ALD aBN serves as an interfacial layer for monolayer MoS 2 transistors, delivering excellent off-state performance, including a close-to-ideal subthreshold slope and minimal threshold voltage variations.

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