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The first mass-produced DRAM of the Soviet Union
In 1966, American engineer and inventor Robert Dennard invented dynamic RAM cells – single-transistor cells, each bit of information is stored in the form of an electric charge of a capacitor. By that time, MOS technology was already capable of creating capacitors.
However, the first commercially available dynamic memory chip, the 1103, released by Intel in October 1970, used three transistors per cell and separate lines to write and read data. It was at Mezon that an attempt was made to produce 565RU1 chips in a cheaper case, especially since the production of analogues had long been established in the West. On November 30, 1943, the State Defense Committee of the USSR ordered the People’s Commissariat of the Electrical Industry to organize a specialized plant of radio components for the production of capacitors and resistors.
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