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TI expands internal manufacturing for gallium nitride (GAN) semiconductors
, quadrupling capacity Using the most advanced GaN manufacturing technology available today, Aizu, Japan, is now the company's second factory to produce a complete portfolio of GaN-based power semiconductors NEWS HIGHLIGHTS: - TI adds GaN manufacturing in Japan, quadrupling its internal GaN manufacturing capacity between its factories in the United States and Japan. - TI's GaN-based semiconductors are in production and available now.
Today, TI offers the widest portfolio of integrated GaN-based power semiconductors, ranging from low- to high-voltage, to enable the most energy-efficient, reliable and power-dense electronics. Further, with the company's proprietary GaN-on-silicon process, more than 80 million hours of reliability testing, and integrated protection features, TI GaN chips are designed to keep high-voltage systems safe. Further, TI's expanded GaN manufacturing processes are fully transferable to 300mm technology, positioning the company to readily scale to customer needs and move to 300mm in the future.
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