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World's fastest Flash memory developed: writes in just 400 picoseconds
This could potentially change how we look at Flash storage.
The newly developed chip, named “PoX” (Phase-change Oxide), is capable of switching at 400-picoseconds, substantially surpassing the previous world record of 2 million operations per second. This speed limitation makes flash memory unsuitable for modern AI (Artificial Intelligence) systems, which often need to move and update large amounts of data almost instantly during real-time processing. Professor Zhou Peng and his team at Fudan University completely reconfigured the structure of Flash memory where instead of traditional silicon, they used two-dimensional Dirac graphene, known for its ability to let charges move rapidly and freely.
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