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World’s fastest memory writes 25 billion bits per sec, 10,000× faster than current tech
PoX is a new class of ultra‑fast, ultra‑green memories that meet the swelling appetite of large‑language‑model accelerators.
A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash memory dubbed “PoX” that programs a single bit in 400 picoseconds (0.0000000004 s) — roughly 25 billion operations per second. The Fudan group, led by Prof. Zhou Peng at the State Key Laboratory of Integrated Chips and Systems, re‑engineered flash physics by replacing silicon channels with two‑dimensional Dirac graphene and exploiting its ballistic charge transport. Combining ultra‑low energy with picosecond write speeds could remove the long‑standing memory bottleneck in AI inference and training hardware, where data shuttling, not arithmetic, now dominates power budgets.
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